Nonvolatile memories with controllable nanogap structures

As one of the candidates of a next-generation memory, we study the memory element using resistance change of the metal nanogap. Since this element has many advantages, for example, quite simple structure, wide material selectivity, highspeed operation, and high temperature tolerance. In this report, miniaturization and mass production, vertical type nanogap elements were developed. As a result of measurements, the characteristic of vertical type is better than the element of lateral type. Moreover, we discuss switching speed of the elements. We confirmed that the switching speed is at least below 50 ns. This is certain progress towards practical use.