Title :
Silicon carbide in a silicon world: introducing wide band gap semiconductor production into a silicon fab
Author :
Shovlin, Joseph ; Woodin, Richard ; Witt, Tony
Author_Institution :
Fairchild Semicond. Corp., South Portland, ME, USA
Abstract :
The Advanced Materials Group has been tasked with bringing silicon carbide (SiC) device production into an existing silicon fab. The goal is to develop processes maximizing utilization of the existing silicon fab infrastructure. This paper will discuss some of the challenges being faced in this task, and how the group is addressing them. While the processes used to fabricate SiC devices are similar to those used to fabricate silicon devices, there are several important differences.
Keywords :
semiconductor device manufacture; semiconductor devices; silicon compounds; wide band gap semiconductors; SiC; SiC device production; SiC devices; advanced materials group; silicon carbide device production; silicon devices; silicon fab infrastructure; silicon world; wide band gap semiconductor production; Conducting materials; Costs; Gallium nitride; Photonic band gap; Production; Semiconductor materials; Silicon carbide; Substrates; Thermal conductivity; Wide band gap semiconductors;
Conference_Titel :
Advanced Semiconductor Manufacturing, 2004. ASMC '04. IEEE Conference and Workshop
Print_ISBN :
0-7803-8312-5
DOI :
10.1109/ASMC.2004.1309608
