Silicon carbide in a silicon world: introducing wide band gap semiconductor production into a silicon fab

The Advanced Materials Group has been tasked with bringing silicon carbide (SiC) device production into an existing silicon fab. The goal is to develop processes maximizing utilization of the existing silicon fab infrastructure. This paper will discuss some of the challenges being faced in this task, and how the group is addressing them. While the processes used to fabricate SiC devices are similar to those used to fabricate silicon devices, there are several important differences.