Title :
Characteristics of atomic layer deposition-derived all-high-k-based structures for flash memory application
Author :
Fu, Y.Y. ; Li, A.D. ; Liu, X.J. ; Li, X.F. ; Wu, D. ; Tang, Z.J.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nanjing Univ., Nanjing, China
Abstract :
A charge trapping flash memory using amorphous Al2O3 as the tunneling layer, La-doped HfO2 films as the charge trapping layer and pure HfO2 as the blocking layer was fabricated and investigated. X-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD), and transmission electron microscopic (TEM) were used to characterize the structures and microstructures. The HfO2/ (HfO2)0.75(La2O3)0.25(HLO) /Al2O3/Si stack annealed at 800°C shows distinct interface and nanocrystals in charge trapping layer. The electrical characteristics and charge storage properties of the HfO2/ HLO/Al2O3/Si stack were also evaluated. The HfO2/ HLO/Al2O3/Si stack annealed at 800°C exhibits a large memory window (9V at ±11 V, 1 s).
Keywords :
X-ray diffraction; X-ray photoelectron spectra; alumina; annealing; atomic layer deposition; crystal microstructure; flash memories; hafnium compounds; high-k dielectric thin films; lanthanum compounds; transmission electron microscopy; tunnelling; HfO2-(HfO2)0.75(La2O3)0.25-Al2O3-Si; HfO2:La; Si; TEM; X-ray diffraction; X-ray photoelectron spectroscopy; XPS; XRD; atomic layer deposition-derived all-high-k-based structures; blocking layer; charge trapping flash memory; nanocrystals; temperature 800 degC; time 1 s; transmission electron microscopic; tunneling layer; voltage -1.1 V; voltage 1.1 V; voltage 9 V; Aluminum oxide; Annealing; Charge carrier processes; Films; Hafnium compounds; Nanocrystals; Silicon; ALD; charge trapping flash memory; nanocrystals;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2011 11th Annual
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-1428-3
DOI :
10.1109/NVMTS.2011.6137098
