DocumentCode
3121837
Title
Improved yields for the nano-technology era using cryogenic aerosols
Author
Wagener, Thomas J. ; Kawaguchi, Kazushi
Author_Institution
FSI Intl. Inc., Chaska, MN, USA
fYear
2004
fDate
4-6 May 2004
Firstpage
467
Lastpage
471
Abstract
In this paper, cryogenic aerosol processing for enhancing final device yield in state-of-art 180 and 130 nm devices is demonstrated. Significant advantages of this particle removal technology is demonstrated and discussed: excellent particle removal efficiency on both hydrophilic and hydrophobic surfaces, no watermarks, no feature damage, no charge induced damage and no film modification or loss.
Keywords
Fourier transform spectra; aerosols; dielectric materials; dielectric thin films; elemental semiconductors; infrared spectra; integrated circuit yield; nanotechnology; nitrogen; polymer films; porous materials; silicon; silicon compounds; surface cleaning; 130 nm; 180 nm; Fourier transform spectra; N2; Si; SiLK; cryogenic aerosol processing; dielectric materials; dielectric thin films; hydrophilic surfaces; hydrophobic surfaces; infrared spectra; nanotechnology; particle removal technology; porous materials; surface cleaning; Aerosols; Argon; Cleaning; Cryogenics; Dielectric devices; Dielectric materials; Nitrogen; Temperature control; Testing; Watermarking;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing, 2004. ASMC '04. IEEE Conference and Workshop
Print_ISBN
0-7803-8312-5
Type
conf
DOI
10.1109/ASMC.2004.1309616
Filename
1309616
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