Title :
Damascene tungsten process for local interconnects with improved reliability performance
Author :
Chapple-Sokel, J. ; Phelps, Rick ; Krywanczyk, Timothy ; Sanetra, Christopher ; Sturtevant, Douglas
Author_Institution :
IBM Microelectron. Div., Essex Junction, VT, USA
Abstract :
Improved functional reliability is demonstrated through implementation of a tungsten damascene process for creating local interconnects that results in a cleaner, more planar surface. Reduction in lateral shorts is posited as the driver for the substantial reduction in yield loss and failure following stress conditions.
Keywords :
chemical mechanical polishing; failure analysis; integrated circuit interconnections; integrated circuit reliability; silicon compounds; tungsten; yield stress; W-SiO2; chemical mechanical polishing; cleaner; failure analysis; functional reliability; local interconnects; planar surface; reliability; stress; substantial reduction; tungsten damascene process; yield loss; Chemical technology; Chemical vapor deposition; Contacts; Dielectric substrates; Microelectronics; Semiconductor device reliability; Silicon; Surface topography; Tungsten; Wiring;
Conference_Titel :
Advanced Semiconductor Manufacturing, 2004. ASMC '04. IEEE Conference and Workshop
Print_ISBN :
0-7803-8312-5
DOI :
10.1109/ASMC.2004.1309617
