Title :
Electrical properties and microscopic structure of amorphous chalcogenides
Author :
Ielmini, D. ; Lacaita, A.L.
Author_Institution :
Dipt. di Elettron. e Inf., Politec. di Milano, Milan, Italy
Abstract :
The quantitative description of conduction in amorphous chalcogenides is one of the major challenges in modeling phase change memory (PCM) devices. The disordered phase is characterized by a spatially dependent band-structure, which also changes with time driven by the spontaneous relaxation toward more energetically favorable configurations. The work reviews some recent models of amorphous conduction that, accounting for the essential features of this changing energy landscape and consistently explaining the experimental results as well as their statistical dependences.
Keywords :
chalcogenide glasses; electrical conductivity; amorphous chalcogenide; amorphous conduction; electrical conduction; energy landscape; microscopic structure; Amorphous semiconductors; Fluctuations; Numerical models; Phase change materials; Resistance; Solid modeling; Strontium; phase change materials; phase change memory; reliability modeling; resistance drift; structural relaxation;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2011 11th Annual
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-1428-3
DOI :
10.1109/NVMTS.2011.6137101
