Author :
Ando, K. ; Yakushiji, K. ; Kubota, H. ; Fukushima, A. ; Yuasa, S. ; Kai, T. ; Kishi, T. ; Shimomura, N. ; Aikawa, H. ; Yoshikawa, M. ; Nagase, T. ; Nishiyama, K. ; Kitagawa, E. ; Daibou, T. ; Amano, M. ; Takahashi, S. ; Nakayama, M. ; Ikegawa, S. ; Nagami
Abstract :
Spin-RAM technologies for operation speed faster than 30 ns, memory capacity larger than 1 Gbits and practically infinite read/write endurance have been developed by using magnetic tunnel junctions with perpendicular magnetization layers. Combination of Spin-RAM and power-gating technology will enable ultra low power computer called Normally-Off Computer.
Keywords :
magnetic tunnelling; magnetisation; random-access storage; infinite read-write endurance; low power computer; magnetic tunnel junction; memory capacity; normally-off computer; perpendicular magnetization layer; power-gating technology; spin RAM technology; Anisotropic magnetoresistance; Computers; Magnetic anisotropy; Magnetic tunneling; Magnetization; Random access memory; Tunneling magnetoresistance; MTJ; Spin-RAM; TMR; current-induced-magnetization-reversal; perpendicular magnetization;
