Title :
[Copyright notice]
Abstract :
The following topics are dealt with: phase change memory; resistive switching memory; FeRAM; and resistive random access memory.
Keywords :
ferroelectric storage; phase change memories; switching circuits; FeRAM; phase change memory; resistive random access memory; resistive switching memory;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2011 11th Annual
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-1428-3
DOI :
10.1109/NVMTS.2011.6137112
