Title :
Defect distribution mapping in quartz
Author :
Zecchini, Pierre ; Lipson, Herbert G.
Author_Institution :
Lab. de Cristallographie et Chimie Miner., Univ. de Franche-Comte, Besancon, France
fDate :
31 May-2 Jun 1989
Abstract :
Infrared and 632.7 nm laser absorption measurements have been used to characterize changes in aluminum compensation for irradiated and air-swept cultured and natural quartz. These measurements demonstrated irradiation dose effects and the competition between Al-OH and Al-h (aluminum-hole) compensation mechanisms. The laser technique was also used to localize mechanical and growth defects. By combining the results of X- and Y-direction observations for a given XY plane, information on both bulk growth defects and surface imperfections from polishing and other mechanical operations was obtained. A complete map of defects was obtained from measurements made over a range of Z-positions. The effects of 60Co gamma irradiation, air sweeping, reirradiation and annealing on grown-in OH. Al-OH and Al-h has been shown
Keywords :
annealing; crystal defects; crystal resonators; gamma-ray effects; measurement by laser beam; nondestructive testing; quartz; 632.8 nm; 60Co gamma irradiation; Al compensated SiO2; IR absorption measurements; SiO2; air sweeping; air swept quartz; annealing; bulk growth defects; compensation mechanisms; cultured quartz; defect distribution mapping; growth defects; irradiated quartz; irradiation dose effects; laser absorption measurements; map of defects; mechanical defects; natural quartz; polishing; quartz; range of Z-positions; reirradiation; surface imperfections; Aluminum; Annealing; Electromagnetic wave absorption; Laser theory; Laser transitions; Silicon; Temperature distribution; Temperature measurement; Temperature sensors; Wavelength measurement;
Conference_Titel :
Frequency Control, 1989., Proceedings of the 43rd Annual Symposium on
Conference_Location :
Denver, CO
DOI :
10.1109/FREQ.1989.68908