Title :
Complementary LDMOSFET in 0.35μm BiCMOS technology-characterization and modeling
Author :
Abouelatta-Ebrahim, M. ; Gontrand, C. ; Zekry, A.
Author_Institution :
Inst. des Nanotechnol. de Lyon, Univ. de Lyon, Villeurbanne, France
Abstract :
In this paper, an nLDMOS and a pLDMOS are developed by slight modifications of the base process steps of 0.35μm BiCMOS technology. Extra two masks are used for the formation of the body region and the drift region with slightly added thermal budget and without resorting to high-tilt implants. The specific ON-resistance (RON,SP) and the OFF-state breakdown voltage(BV) are 1.5 mΩcm2 and 60V, for the nLDMOS and 3.0 mΩcm2 and 160V, for the pLDMOS. So, the devices can typically be operated around 42V supply voltage, which is suitable for the new automotive applications. A simple subcircuit model is built using a two module approach, one for the intrinsic MOS area and the other for the drift region. The PSpice model parameters of the intrinsic MOS part are extracted using a system that links the ICCAP extraction tool with the results of the ISETCAD tools. The simulation results using the PSpice model are compared to the results provided by ISE-TCAD tools, and the accuracy at room temperature is less than 5% for the whole voltage domain. An interface circuit, to convert 0/3.3 V to 0/42 V, suitable for automotive applications is proposed.
Keywords :
MOSFET; SPICE; automotive electronics; semiconductor device breakdown; technology CAD (electronics); BiCMOS technology-characterization; ICCAP extraction tool; ISETCAD tools; OFF-state breakdown voltage; PSpice model parameters; automotive applications; body region; complementary LDMOSFET; drift region; high-tilt implants; interface circuit; intrinsic MOS area; intrinsic MOS part; nLDMOS; pLDMOS; size 0.35 mum; slightly added thermal budget; specific ON-resistance; subcircuit model; voltage 160 V; voltage 60 V; BiCMOS integrated circuits; Doping; Electric breakdown; Electric fields; Resistance; SPICE; Transistors; 0.35μm BiCMOS; Automotive applications; Breakdown voltage; REduced SURface Field (RESURF); Smart power; Specific ON-resistance; cLDMOS; nLDMOS; pLDMOS;
Conference_Titel :
Industrial Electronics (ISIE), 2010 IEEE International Symposium on
Conference_Location :
Bari
Print_ISBN :
978-1-4244-6390-9
DOI :
10.1109/ISIE.2010.5637652