DocumentCode
3122839
Title
Sol-gel prepared In2O3 thin films for ozone sensing
Author
Wlodarski, Wojtek ; Sun, Long-Tao ; Gurlo, Alexander ; Göpel, Wolfgang
Author_Institution
Dept. of Commun. & Electr. Eng., R. Melbourne Inst. of Technol., Vic., Australia
Volume
1
fYear
1997
fDate
16-19 Jun 1997
Firstpage
573
Abstract
Novel ozone sensors based on In2O3 thin films on sapphire substrates with interdigitated comb structures have been prepared from indium isopropoxide solutions by the sol-gel process. Highly sensitive films have been obtained by using aged solutions. The annealing temperature was 500°C. Compared with earlier thin film devices, the advantages of these sensors include significantly higher ozone sensitivity (as large as 6 at 45 ppb), lower working temperature (below 200°C) and low production cost
Keywords
air pollution measurement; annealing; gas sensors; indium compounds; semiconductor growth; semiconductor materials; semiconductor thin films; sol-gel processing; 200 C; 500 C; Al2O3; In2O3; In2O3 thin films; O3; aged solutions; annealing temperature; highly sensitive films; indium isopropoxide solutions; interdigitated comb structures; low production cost; ozone sensing; ozone sensitivity; sapphire substrates; sol-gel process; urban pollutant; working temperature; Acoustic sensors; Atmosphere; Chemistry; Costs; Indium; Substrates; Surface acoustic waves; Temperature sensors; Thin film sensors; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
Conference_Location
Chicago, IL
Print_ISBN
0-7803-3829-4
Type
conf
DOI
10.1109/SENSOR.1997.613715
Filename
613715
Link To Document