Sensors and instrumentation for the magnetic field measurement under high neutron fluences

Author

Hristoforou, E. ; Bolshakova, I. ; Holyaka, R. ; Duran, I. ; Stöckel, J. ; Viererbl, L. ; Vayakis, G.

Author_Institution

Nat. Tech. Univ. of Athens, Greece

fYear

2004

fDate

24-27 Oct. 2004

Firstpage

1075

Abstract

We present the results of a study of Hall-type magnetic field semiconductor sensors, based on monocrystalline whiskers and InSb thin films under harsh radiation conditions created by high-energy neutron irradiation up to the fluence of F=3.1·10¹⁶ n·cm^-2 in the reactor IBR-2 and up to the fluence of F= 1·10¹⁸ n·cm^-2 in reactor LVR-15. Optimal parameters of sensors´ semiconductor materials, ensuring maximum stability under these radiation conditions, were determined.

Keywords

Hall effect transducers; III-V semiconductors; electric sensing devices; indium compounds; magnetic field measurement; magnetic sensors; neutron effects; radiation; semiconductor thin films; stability; Hall-type sensors; InSb; harsh radiation conditions; high neutron fluences; indium antimonide thin films; magnetic field measurement; magnetic field sensors; monocrystalline whiskers; optimal semiconductor material parameters; stability; Inductors; Instruments; Magnetic field measurement; Magnetic films; Magnetic sensors; Neutrons; Semiconductor materials; Semiconductor thin films; Stability; Thin film sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2004. Proceedings of IEEE

Print_ISBN

0-7803-8692-2

Type

conf

DOI

10.1109/ICSENS.2004.1426361

Filename

1426361