Title :
GaAs low-power shift register and arithmetic logic unit for a high-speed digital signal processor
Author :
Singh, H.P. ; Sadler, R.A. ; Irvine, J.A. ; Gorder, G.E.
Author_Institution :
ITT Gallium Arsenide Technol. Center, Roanoke, VA, USA
Abstract :
A high-speed 8-bit shift register and 4-bit ALU (arithmetic logic unit) have been implemented using low-power GaAs DCFL (direct-coupled FET logic). Both circuits are fabricated with a high-yield titanium tungsten nitride self-aligned gate MESFET process. The 8-bit shift register works at up to 1.9 GHz and consumes only 56 mW of power, while the 4-bit ALU performs at up to 1.2 GHz with a 131-mW power dissipation. Both chips show a functional yield over 83%. The circuits operate over a wide variation in power-supply voltage and temperature. The results demonstrate state-of-the-art high-frequency performance at extremely low power dissipation
Keywords :
III-V semiconductors; computerised signal processing; field effect integrated circuits; gallium arsenide; integrated logic circuits; shift registers; 1.2 GHz; 1.9 GHz; 131 mW; 4 bit; 56 mW; 8 bit; ALU; DCFL; GaAs; III-V semiconductor; TiWN; arithmetic logic unit; digital signal processor; direct-coupled FET logic; high speed DSP; low power dissipation; low-power; self-aligned gate MESFET process; shift register; Arithmetic; FETs; Gallium arsenide; Logic; MESFET circuits; Power dissipation; Shift registers; Titanium; Tungsten; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 1988., Proceedings of the IEEE 1988
Conference_Location :
Rochester, NY
DOI :
10.1109/CICC.1988.20884
