DocumentCode :
3123169
Title :
A dynamic substrate bias inverter for low voltage applications
Author :
Lo, C.K. ; Chan, Philip C.H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
fYear :
1997
fDate :
35672
Firstpage :
19
Lastpage :
22
Abstract :
A new type of inverter for low voltage and low power applications is proposed. It is designed so that the substrate bias voltage can be dynamically adjusted. The bulk is biased positively in the active mode to decrease the threshold voltage Vth and thus provide more output drive, while in the standby mode the substrate bias is not applied to maintain a high Vth, therefore reduce the leakage current. Comparison of performance between the proposed dynamic threshold inverter DTINV and conventional CMOS inverter are made
Keywords :
CMOS integrated circuits; invertors; CMOS inverter; DTINV; active mode; dynamic substrate bias inverter; leakage current; low power application; low voltage application; output drive; standby mode; threshold voltage; Capacitance; Circuit synthesis; Degradation; Delay; Diodes; Inverters; Leakage current; Low voltage; MOSFET circuits; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong
Print_ISBN :
0-7803-3802-2
Type :
conf
DOI :
10.1109/HKEDM.1997.642318
Filename :
642318
Link To Document :
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