PNP bipolar structure design for low voltage 0.6 μm complementary BiCMOS technology

Author

Belaroussi, M.T. ; Djezzar, B. ; Mekhaldi, S.

Author_Institution

Mictroelectron. Lab., Centre de Dev. des Technol. Avancees, El-Madania, Algeria

fYear

1997

fDate

35672

Firstpage

23

Lastpage

26

Abstract

This paper describes simulation results of a vertical PNP bipolar structure design suitable for low voltage application which can be fabricated in BiCMOS technology. This study is carried out using a mixed two dimensional numerical device/circuit simulation program called CODECS. The simulations show that adding a medium performance PNP transistor, the performance of the complementary BiCMOS over conventional BiCMOS and CMOS were greatly improved as the supply voltage is lowered and the design rules is scaled down to 0.6 μm

Keywords

BiCMOS integrated circuits; integrated circuit modelling; integrated circuit technology; 0.6 micron; CODECS; LV complementary BiCMOS technology; PNP bipolar structure design; design rules scaling; low voltage BiCMOS technology; mixed 2D numerical device/circuit simulation program; supply voltage reduction; vertical pnp bipolar structure; BiCMOS integrated circuits; CMOS technology; Circuit simulation; Codecs; Doping profiles; Inverters; Low voltage; MOS devices; MOSFETs; Numerical models; Photonic band gap; Poisson equations;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong

Print_ISBN

0-7803-3802-2

Type

conf

DOI

10.1109/HKEDM.1997.642323

Filename

642323