Title :
Extraction of the threshold voltage of MOSFETs: an overview
Author :
Liou, J.J. ; Ortiz-Conde, A. ; Sanchez, F. Garcia
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA
Abstract :
The threshold voltage is a key parameter in the silicon MOSFET design and operation. This paper gives an overview of the existing methods for extracting the threshold voltage of MOSFETs. In addition, a new extraction method is proposed and developed. Comparisons of the results extracted from the various methods based on device simulation, circuit simulation, and measurements are also presented
Keywords :
MOSFET; elemental semiconductors; semiconductor device models; silicon; Si; Si MOSFET; circuit simulation; device simulation; threshold voltage extraction; Circuit simulation; Current-voltage characteristics; Extrapolation; Fabrication; MOSFETs; Silicon; Subthreshold current; Temperature; Threshold voltage; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong
Print_ISBN :
0-7803-3802-2
DOI :
10.1109/HKEDM.1997.642325
