DocumentCode
3123301
Title
Extraction of the threshold voltage of MOSFETs: an overview
Author
Liou, J.J. ; Ortiz-Conde, A. ; Sanchez, F. Garcia
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA
fYear
1997
fDate
35672
Firstpage
31
Lastpage
38
Abstract
The threshold voltage is a key parameter in the silicon MOSFET design and operation. This paper gives an overview of the existing methods for extracting the threshold voltage of MOSFETs. In addition, a new extraction method is proposed and developed. Comparisons of the results extracted from the various methods based on device simulation, circuit simulation, and measurements are also presented
Keywords
MOSFET; elemental semiconductors; semiconductor device models; silicon; Si; Si MOSFET; circuit simulation; device simulation; threshold voltage extraction; Circuit simulation; Current-voltage characteristics; Extrapolation; Fabrication; MOSFETs; Silicon; Subthreshold current; Temperature; Threshold voltage; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong
Print_ISBN
0-7803-3802-2
Type
conf
DOI
10.1109/HKEDM.1997.642325
Filename
642325
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