Physical model and numerical results of dissociation kinetics of hydrogen-passivated Si/SiO2 interface defects

A simple model of thermal dissociation of hydrogen from silicon dangling bonds (P_b centers) and their hydrogen passivation with vacuum annealing is suggested. It takes into account the reactions occurring for hydrogen with defect states at the interface of the Si/SiO ₂ structure as well as the diffusion process for atomic and molecular hydrogen. The reaction kinetic coefficients were calculated in diffusion approximation. Excellent agreement of calculations with experimental data was obtained in the temperature range (480-700°C), and oxide thickness of (200-1024 Å) for the (111) and (100) interfaces