Title :
New theory of the thermal oxidation of silicon
Author_Institution :
Acad. of Sci., Novosibirsk, Russia
Abstract :
The growth kinetics of SiO2 films on silicon is developed. A simple model of oxidation takes into account the reactions occurring in bulk and at the two interfaces of the oxide layer as well as the diffusion process for atomic oxygen and diffusion approximation for calculation of the coefficients of kinetic reactions. The relationship is shown to be in excellent agreement with oxidation data obtained over a range of temperature (800°-1200°C), and oxide thickness (6-400 Å) for O2 and N2O ambient oxidation
Keywords :
elemental semiconductors; oxidation; reaction kinetics; silicon; surface diffusion; 800 to 1200 C; Si-SiO2; SiO2 film; growth kinetics; interfacial diffusion; reaction model; silicon; thermal oxidation; Atomic layer deposition; Diffusion processes; Equations; Kinetic theory; Large-scale systems; Marine vehicles; Oxidation; Semiconductor films; Silicon; Silicon devices; Temperature distribution;
Conference_Titel :
Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong
Print_ISBN :
0-7803-3802-2
DOI :
10.1109/HKEDM.1997.642334
