Title :
Transport of charge and electronic structure of traps in SONOS structures
Author :
Gritsenko, V.A. ; Novikov, Yu.N. ; Morokov, Yu.N. ; Wong, H.
Author_Institution :
Inst. of Semicond. Phys., Novosibirsk, Russia
Abstract :
In this experiment, we found that the barrier height is 2.0 eV for tunneling electron injecting from Al/Si3N4 and 1.5 eV for hole injecting from Au/Si3N4 interface. The last value is more precise than those obtained from photoemission measurement. A more precise energy band diagram for MNOS structure is then determined. Numerical simulation using MINDO/3 was also performed and results show that the Si-Si bond in Si3N4 can traps both electrons and holes
Keywords :
MINDO calculations; MIS structures; electron traps; hole traps; semiconductor-insulator-semiconductor structures; tunnelling; AI/Si3N4 interface; Al-Si3N4; Au-Si3N4; Au/Si3N4 interface; MINDO/3; MNOS structure; SONOS structure; barrier height; charge transport; electron injection; electronic structure; energy band diagram; hole injection; numerical simulation; traps; tunneling; Bonding; Charge carrier processes; Dielectrics; EPROM; Electron traps; Gold; Nonvolatile memory; Numerical simulation; Photoelectricity; SONOS devices; Temperature; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong
Print_ISBN :
0-7803-3802-2
DOI :
10.1109/HKEDM.1997.642335
