Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

Author

Huang, L. ; Lai, P.T. ; Xu, J.P. ; Cheng, Y.C.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong

fYear

1997

fDate

35672

Firstpage

94

Lastpage

97

Abstract

An analytical expression for gate-induced drain leakage (GIDL) current based on indirect tunneling theory is described, which can be used for both band-to-band and band-trap-band tunnelings. The voltage and temperature dependence of GIDL and hot-carrier-induced drain leakage are investigated. Experiment shows that interface traps participate in the conduction of GIDL and indirect band-trap-band tunneling could be a major mechanism responsible for GIDL

Keywords

MOSFET; electron traps; hot carriers; leakage currents; tunnelling; GIDL current; band-to-band tunneling; band-trap-band tunneling; gate-induced drain leakage; hot-carrier-induced drain leakage; indirect tunneling theory; interface traps; mechanism analysis; n-channel MOSFET; off-state n-MOSFET; offstate NMOSFET; temperature dependence; voltage dependence; Electrical resistance measurement; Hot carriers; MOSFET circuits; Silicon; Stress measurement; Temperature dependence; Temperature measurement; Thermal stresses; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong

Print_ISBN

0-7803-3802-2

Type

conf

DOI

10.1109/HKEDM.1997.642340

Filename

642340