Title :
Advanced double-gate fully-depleted silicon-on-insulator (DG-FDSOI) device and device impact on circuit design & power management
Author_Institution :
Motorola SPS, Austin, TX, USA
Abstract :
Power consumption including leakage current is becoming one of the most important limiting factors in VLSI, especially in the sub-65nm technologies. While technologies are facing multiple challenges in scaling, there have been successful developments on reduction of power consumption and leakage current in circuit and system design techniques based on the cooperation between two traditionally separated technical fields - technology and design. The benefits of separate gate access capability of DG-FDSOI technology on supporting these kinds of cooperation techniques have been addressed together with the impact on circuit designs which take advantages of this technology.
Keywords :
CMOS integrated circuits; MOSFET; VLSI; leakage currents; low-power electronics; silicon-on-insulator; CMOS technology platform; VLSI limiting factors; advanced double-gate fully-depleted SOI; circuit design; device integration; leakage current; power consumption; power management; separate gate access capability; CMOS technology; Circuit synthesis; Energy consumption; Energy management; Leakage current; Logic circuits; MOSFETs; Silicon on insulator technology; Technology management; Voltage;
Conference_Titel :
Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on
Print_ISBN :
0-7803-8528-4
DOI :
10.1109/ICICDT.2004.1309917
