• DocumentCode
    3124090
  • Title

    Deep Ultraviolet Light Emitting Diodes

  • Author

    Khan, M.Asif

  • Author_Institution
    South Carolina Univ., Columbia, SC
  • fYear
    2006
  • fDate
    Oct. 2006
  • Firstpage
    30
  • Lastpage
    31
  • Abstract
    In this paper, light-emitting devices based on III-nitride semiconductors offer many advantages including miniaturization, reliability, reduced costs, low power consumption, and ultimately a choice of wavelength of operation between 365 and 200 nm is discussed
  • Keywords
    III-V semiconductors; LED lamps; 365 to 200 nm; III-nitride semiconductors; deep ultraviolet light emitting diodes; light-emitting devices; Aluminum gallium nitride; Annealing; Fluorescent lamps; Gallium nitride; Geometry; Gold; LED lamps; Light emitting diodes; MOCVD; Purification;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
  • Conference_Location
    Montreal, Que.
  • Print_ISBN
    0-7803-9555-7
  • Electronic_ISBN
    0-7803-9555-7
  • Type

    conf

  • DOI
    10.1109/LEOS.2006.278803
  • Filename
    4054040
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3124090