DocumentCode
3124122
Title
Uniform emission from matrix-addressable micro-pixellated InGaN light-emitting diodes
Author
Gong, Z. ; Zhang, H.X. ; Gu, E. ; Dawson, M.D.
Author_Institution
Inst. of Photonics, Strathclyde Univ., Glasgow
fYear
2006
fDate
Oct. 2006
Firstpage
32
Lastpage
33
Abstract
In this work, we investigate and identify the main causes of this problem and develop a new fabrication process to improve the light emission uniformity and light output of the micro-LEDs
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; micro-optics; optical fabrication; InGaN; fabrication process; light emission uniformity; matrix-addressable micropixellated light-emitting diodes; microLED; Conductivity; Contact resistance; Electrical resistance measurement; Fluorescence; Gold; Light emitting diodes; Lighting; Optical imaging; Photonics; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location
Montreal, Que.
Print_ISBN
0-7803-9555-7
Electronic_ISBN
0-7803-9555-7
Type
conf
DOI
10.1109/LEOS.2006.278804
Filename
4054041
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