DocumentCode :
3124122
Title :
Uniform emission from matrix-addressable micro-pixellated InGaN light-emitting diodes
Author :
Gong, Z. ; Zhang, H.X. ; Gu, E. ; Dawson, M.D.
Author_Institution :
Inst. of Photonics, Strathclyde Univ., Glasgow
fYear :
2006
fDate :
Oct. 2006
Firstpage :
32
Lastpage :
33
Abstract :
In this work, we investigate and identify the main causes of this problem and develop a new fabrication process to improve the light emission uniformity and light output of the micro-LEDs
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; micro-optics; optical fabrication; InGaN; fabrication process; light emission uniformity; matrix-addressable micropixellated light-emitting diodes; microLED; Conductivity; Contact resistance; Electrical resistance measurement; Fluorescence; Gold; Light emitting diodes; Lighting; Optical imaging; Photonics; Power generation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
Type :
conf
DOI :
10.1109/LEOS.2006.278804
Filename :
4054041
Link To Document :
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