DocumentCode
3124137
Title
InGaN/GaN based LEDs with electroluminescence in violet, blue, and green tuned by epitaxial growth temperature
Author
Sari, Emre ; Nizamoglu, Sedat ; Ozel, Tuncay ; Demir, Hilmi Volkan ; Inal, Ayse ; Ulker, Erkin ; Ozbay, Ekmel ; Dikme, Yilmaz ; Heuken, Micheal
Author_Institution
Dept. of Phys., Bilkent Univ., Ankara
fYear
2006
fDate
Oct. 2006
Firstpage
34
Lastpage
35
Abstract
In this work, we present a full set of InGaN LEDs based on a single optimal InGaN/GaN quantum design with emission wavelengths spanning from green to blue to violet by tuning the active layer growth temperature to precisely control InN incorporation into the quantum structures
Keywords
III-V semiconductors; electroluminescence; gallium compounds; indium compounds; light emitting diodes; optical design techniques; semiconductor epitaxial layers; semiconductor growth; InGaN-GaN; LED; electroluminescence; epitaxial growth temperature tuning; quantum structures; semiconductor quantum design; Electroluminescence; Epitaxial growth; Gallium nitride; Light emitting diodes; Nanotechnology; Photoluminescence; Physics; Stimulated emission; Temperature dependence; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location
Montreal, Que.
Print_ISBN
0-7803-9555-7
Electronic_ISBN
0-7803-9555-7
Type
conf
DOI
10.1109/LEOS.2006.278805
Filename
4054042
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