Title :
III-Nitride Wide Bandgap Semiconductors for Optical Communications
Author :
Jiang, H.X. ; Ugolini, C. ; Lin, J.Y. ; Zavada, J.M.
Author_Institution :
Dept. of Phys., Kansas State Univ., Manhattan, KS
Abstract :
This paper provides a brief overview on recent advances in the exploitation of III-nitride semiconductors for optical communications, such as epitaxial growth of Er-doped III-nitride materials by MOCVD and optical waveguide fabrication. Advantages and challenges of this emerging technology will be discussed
Keywords :
III-V semiconductors; MOCVD; erbium; optical communication equipment; optical fabrication; optical materials; optical waveguides; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; III-nitride wide bandgap semiconductors; MOCVD; epitaxial growth; optical communications; optical waveguide fabrication; Erbium; Gallium nitride; Optical fiber communication; Optical materials; Optical pumping; Optical refraction; Optical variables control; Stimulated emission; Ultrafast optics; Wide band gap semiconductors;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.278806
