Observation of strong many-body effects in thin InN films grown on GaN buffer layers

Author

Mu, Xiaodong ; Ding, Yujie J. ; Wang, Kejia ; Jena, Debdeep ; Khurgin, Jacob B.

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA

fYear

2006

fDate

Oct. 2006

Firstpage

38

Lastpage

39

Abstract

Here, we present our new results following our studies of the temperatureand intensity-dependent photoluminescence (PL) spectra. We grew two samples of the InN thin films by using molecular-beam epitaxy. Both of the films were deposited on the 4-mum-thick semi-insulating GaN buffer layers. These buffer layers were directly grown on the (0001) sapphire substrates

Keywords

III-V semiconductors; gallium compounds; indium compounds; molecular beam epitaxial growth; photoluminescence; sapphire; semiconductor thin films; 4 micron; Al₂O₃; GaN; GaN buffer layers; InN; intensity-dependent PL spectra; many-body effects; molecular-beam epitaxy; sapphire substrates; temperature-dependent photoluminescence spectra; thin InN films growth; Buffer layers; Charge carrier processes; Electrons; Gallium nitride; Laser excitation; Photonic band gap; Radiative recombination; Spontaneous emission; Temperature measurement; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE

Conference_Location

Montreal, Que.

Print_ISBN

0-7803-9555-7

Electronic_ISBN

0-7803-9555-7

Type

conf

DOI

10.1109/LEOS.2006.278807

Filename

4054044