Title :
Improved surface plasmon coupling with an InGaN/GaN quantum well for more effective emission enhancement
Author :
Lu, Yen-Cheng ; Tsai, Fu-Ji ; Wang, Jyh-Yang ; Lin, Cheng-Hung ; Shen, Kun-Ching ; Chen, Cheng-Yen ; Lu, Chih-Feng ; Kiang, Yean-Woei ; Yang, C.C.
Author_Institution :
Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
With a dielectric layer between metal and semiconductor for generating surface plasmon, the dissipation rate of metal is reduced and the evanescent-field range is increased such that surface plasmon coupling leads to stronger emission enhancement.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; semiconductor quantum wells; surface plasmons; wide band gap semiconductors; InGaN-GaN; dielectric layer; dissipation rate; emission enhancement; evanescent-field; quantum well; surface plasmon coupling; Annealing; Dielectrics; Energy loss; Gallium nitride; Lead compounds; Light emitting diodes; Optical coupling; Photonics; Plasmons; Resonance;
Conference_Titel :
OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-4102-0
Electronic_ISBN :
978-1-4244-4103-7
DOI :
10.1109/OECC.2009.5218178
