Title :
MnO/TeO2 thin films as optical gamma radiation sensors
Author :
Arshak, Khalil I. ; Molloy, Jonathan ; Korostynska, Olga ; Harris, John
Author_Institution :
Dept. of Electron. & Comput. Eng., Limerick Univ., Ireland
Abstract :
This work investigates the effects of γ-rays on the optical properties of pure and mixed oxide materials, namely MnO and TeO2, for their possible application as thin film optical gamma radiation sensors. The values of the optical band gap Eopt were obtained in view of the Mott and Davis theory. All samples showed a decrease in Eopt with an increase in radiation dose to a certain level, which was found to be composition-dependent. Films with 100 wt.% MnO exhibited the highest sensitivity to low doses of radiation, showing a strong decline in the optical band gap value from 0.64 eV before irradiation to 0.54 eV after a dose of 1.14 mSv. It was experimentally confirmed that both the sensitivity and the working dose range of radiation sensors can be controlled by the composition of the materials used.
Keywords :
electron device testing; energy gap; gamma-ray detection; manganese compounds; photonic band gap; tellurium compounds; thin film devices; 0.54 eV; 0.64 eV; 1.14 mSv; MnO; MnO thin film optical gamma radiation sensors; MnO-TeO2; MnO/TeO2 thin film optical gamma radiation sensors; Mott and Davis theory; TeO2; TeO2 thin film optical gamma radiation sensors; composition-dependent values; gamma ray effects; materials composition; mixed oxide materials; optical band gap; pure oxide materials; radiation dose; sensitivity; working dose range; Electrodes; Electromagnetic wave absorption; Gamma ray detectors; Gamma rays; Optical films; Optical sensors; Paramagnetic materials; Thin film sensors; Transistors; X-ray scattering;
Conference_Titel :
Sensors, 2004. Proceedings of IEEE
Print_ISBN :
0-7803-8692-2
DOI :
10.1109/ICSENS.2004.1426416
