Title :
Linewidth Enhancement Factor of a 1.3μm GaInNAs/GaAs Laser by Optical Gain Analysis
Author :
Zhang, X. ; Gupta, J.A. ; Barrios, P.J. ; Pakulski, G. ; Hall, T.J.
fDate :
Oct. 29 2006-Nov. 2 2006
Abstract :
An experimental determination of the linewidth enhancement factor, alpha, of a GaInNAs/GaAs laser is presented. The modal gain and Fabry-Perot mode shift with injection current were analysed to derive a value of alpha=2.8 at threshold for the 1278 nm emission
Keywords :
Fabry-Perot resonators; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser modes; semiconductor lasers; spectral line breadth; 1.3 micron; 1278 nm; Fabry-Perot mode shift; GaInNAs-GaAs; GaInNAs-GaAs laser; injection current; linewidth enhancement factor; optical gain analysis; Charge carrier density; Fabry-Perot; Fiber lasers; Frequency modulation; Gain measurement; Gallium arsenide; Laser modes; Laser theory; Optical refraction; Quantum well lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9556-5
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.278836
