Title :
Surface electronic structure of light-emitting porous polycrystalline silicon thin films
Author :
Han, P.G. ; Wong, H. ; Poon, M.C.
Author_Institution :
Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, Hong Kong
Abstract :
Surface electronic structure of light-emitting porous polycrystalline silicon (PPS) is studied using X-ray photoelectron spectroscopy (XPS). We find that the PPS films with strong photoluminescence effect can only be observed in thin films with trace amounts of silicon nanoclusters and the luminescence can be enhanced remarkably with proper passivation of the PPS surface
Keywords :
X-ray photoelectron spectra; elemental semiconductors; nanostructured materials; passivation; photoluminescence; porous materials; semiconductor thin films; silicon; surface structure; Si; X-ray photoelectron spectroscopy; light-emitting porous polysilicon thin films; nanoclusters; passivation; photoluminescence effect; surface electronic structure; Amorphous silicon; Chemicals; Luminescence; Oxygen; Passivation; Photoluminescence; Semiconductor films; Semiconductor thin films; Silicon; Spectroscopy; Temperature;
Conference_Titel :
Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong
Print_ISBN :
0-7803-3802-2
DOI :
10.1109/HKEDM.1997.642350
