Low voltage, broad-and narrowband microwave differential amplifiers for 40 Gb/s-demonstrator applications in InP-HBT

Author

Mokhtari, M. ; Juhola, T. ; Kerzar, B. ; Schuppener, G. ; Westergren, U. ; Tenhunen, H. ; Swahn, T. ; Lewin, T. ; Stanchina, W.E. ; Walden, R.

Author_Institution

Dept. of Electron., R. Inst. of Technol., Stockholm, Sweden

Volume

1

fYear

1997

fDate

9-12 Jun 1997

Firstpage

149

Abstract

DC-15 GHz 1.7 Volts and DC-30 GHz 3 Volts wideband amplifiers and 40 GHz, 3 Volts narrowband amplifier with bandwidth of about 200 MHz have been designed and fabricated in Hughes Research Laboratories´ InP-HBT technology. The 15 GHz amplifier is based on a differential stage with emitter degeneration resistors and the 30 GHz and 40 GHz amplifiers utilize trans-impedance, trans-admittance structures

Keywords

III-V semiconductors; MMIC amplifiers; bipolar MMIC; bipolar analogue integrated circuits; differential amplifiers; indium compounds; microwave amplifiers; optical fibre communication; optical receivers; wideband amplifiers; 0 to 15 GHz; 0 to 30 GHz; 1.7 V; 200 MHz; 3 V; 40 GHz; 40 Gbit/s; HBT technology; Hughes Research Laboratories; InP; emitter degeneration resistors; microwave differential amplifiers; narrowband amplifier; transimpedance transadmittance structures; wideband amplifiers; Band pass filters; Broadband amplifiers; Clocks; Differential amplifiers; Frequency; Integrated circuit interconnections; Laboratories; Low voltage; Microwave technology; Narrowband;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1997. ISCAS '97., Proceedings of 1997 IEEE International Symposium on

Print_ISBN

0-7803-3583-X

Type

conf

DOI

10.1109/ISCAS.1997.608638

Filename

608638