Advanced germanium MOSFET technologies with high-κ gate dielectrics and shallow junctions

Author

Chui, Chi On ; Saraswat, Krishna C.

Author_Institution

Dept. of Electr. Eng., Stanford Univ., CA, USA

fYear

2004

fDate

2004

Firstpage

245

Lastpage

252

Abstract

Various advanced germanium (Ge) metal-oxide-semiconductor field-effect transistor (MOSFET) technologies with high-permittivity (high-κ) gate dielectrics and shallow junctions have been demonstrated. Numerous novel Ge technologies on surface cleaning, gate dielectric, and dopant incorporation are presented In addition, we disclose an innovative self-aligned gate-last fabrication process not only to demonstrate functional Ge MOSFETs, but also to provide a vehicle to characterize many novel material integration schemes.

Keywords

MOSFET; elemental semiconductors; germanium; nanoelectronics; nitridation; rapid thermal annealing; semiconductor doping; thermal stability; Ge; advanced germanium MOSFET technologies; dopant incorporation; functional MOSFET; high mobility material; high-permittivity gate dielectrics; material integration schemes; nanoscale dielectrics; rapid thermal nitridation; self-aligned gate-last fabrication; shallow junctions; surface cleaning; thermal anneal budget; thermal stability; Dielectric devices; Dielectric materials; Germanium; MOSFET circuits; Monte Carlo methods; Nanoscale devices; Optical scattering; Photonic band gap; Threshold voltage; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on

Print_ISBN

0-7803-8528-4

Type

conf

DOI

10.1109/ICICDT.2004.1309955

Filename

1309955