DocumentCode
3124737
Title
Threshold voltage instability and plasma induced damage of polySi/HfO2 devices - positive impact of deuterium incorporation
Author
Tseng, H.-H. ; Ramon, M.E. ; Hebert, L. ; Tobin, P.J. ; Triyoso, D. ; Kalpat, S. ; Grant, J.M. ; Jiang, Z.-X. ; Gilmer, D.C. ; Menke, D. ; Taylor, W.J. ; Adetutu, O. ; White, B.E.
Author_Institution
Total Solutions Organ., Freescale Semicond. Inc., Austin, TX, USA
fYear
2004
fDate
2004
Firstpage
255
Lastpage
259
Abstract
Device instability is one of the most challenging issues to implement High-K gate dielectric. Incorporation of deuterium during the ALD process effectively improves the interface quality that enhances High-K device stability and reliability. Compared to H2O processed HfO2 devices, devices with D2O processing result in a significantly smaller Vt shift after constant voltage stressing at room temperature and at 125°C under NBTI/PBTI conditions, as well as a longer CHCI lifetime. This process is independent of transistor process integration and is relatively low cost. It has the potential to become an industry standard if ALD High-K gate dielectric processing is the final choice.
Keywords
MOSFET; atomic layer deposition; carrier lifetime; electron traps; elemental semiconductors; hafnium compounds; hot carriers; interface states; passivation; plasma materials processing; secondary ion mass spectra; silicon; Si-HfO2; atomic layer deposition; channel hot carrier injection lifetime; deuterium incorporation; deuterium passivated interface; device reliability; high-k device stability; interface quality; low energy SIMS analysis; plasma induced damage; polysilicon-HfO2 devices; relatively low cost; standard CMOS process flow; threshold voltage instability; trapped charge; Deuterium; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Niobium compounds; Plasma devices; Plasma stability; Plasma temperature; Threshold voltage; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on
Print_ISBN
0-7803-8528-4
Type
conf
DOI
10.1109/ICICDT.2004.1309957
Filename
1309957
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