Discrete B-spline wavelet method for semiconductor device simulation

Author

Chang, Fung Yuel ; Pun, Kong-Pang

Author_Institution

Chinese Univ. of Hong Kong, Shatin, Hong Kong

Volume

1

fYear

1997

fDate

9-12 Jun 1997

Firstpage

193

Abstract

Wavelet Method has been found to be very effective in treating singularities due to its properties of localization both in time/spatial and frequency domains. Singularities exist in the simulation of semiconductor devices. We now introduce the Discrete B-spline wavelet method for semiconductor devices simulation. Starting from the governing equations of semiconductor devices, the wavelet basis is used to solve these nonlinear ordinary differential equations. We find it much better than conventional finite difference methods in both computational time and accuracy. As an example, the steady state response of an abrupt P-N junction diode demonstrates this effectiveness

Keywords

frequency-domain analysis; nonlinear differential equations; semiconductor device models; semiconductor diodes; splines (mathematics); time-domain analysis; transforms; wavelet transforms; abrupt P-N junction diode; computational time; discrete B-spline wavelet method; frequency domains; governing equations; nonlinear ordinary differential equations; semiconductor device simulation; time/spatial domains; Computational modeling; Differential equations; Discrete wavelet transforms; Finite difference methods; Frequency domain analysis; Nonlinear equations; Semiconductor devices; Spline; Steady-state; Wavelet domain;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1997. ISCAS '97., Proceedings of 1997 IEEE International Symposium on

Print_ISBN

0-7803-3583-X

Type

conf

DOI

10.1109/ISCAS.1997.608664

Filename

608664