Ultraviolet-sensitive AlGaN-based surface acoustic wave devices

Author

Ciplys, D. ; Shur, M.S. ; Pala, N. ; Sereika, A. ; Rimeika, R. ; Gaska, R. ; Fareed, Q.

Author_Institution

Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

2004

fDate

24-27 Oct. 2004

Firstpage

1345

Abstract

Two types of novel ultraviolet-sensitive III-nitride based surface acoustic wave devices are presented. We demonstrate the Al_xGa_l-xN-based surface acoustic wave delay-line oscillator, which is applied as an ultraviolet sensor capable of solar-blind operation with remote wireless pickup of the output signal. Also, we report on the SAW-induced high-frequency resistance modulation effect, which is dramatically increased under ultraviolet illumination.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; interdigital transducers; surface acoustic wave oscillators; surface acoustic wave sensors; ultraviolet detectors; wide band gap semiconductors; AlGaN; IDT; SAW delay-line oscillator; SAW-induced high-frequency resistance modulation effect; UV illumination; UV-sensitive surface acoustic wave devices; optical sensors; remote wireless pickup; solar-blind operation; ultraviolet sensor; ultraviolet-sensitive SAW devices; Acoustic sensors; Acoustic waves; Gallium nitride; Optical sensors; Optical surface waves; Oscillators; Photonic band gap; Surface acoustic wave devices; Surface acoustic waves; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2004. Proceedings of IEEE

Print_ISBN

0-7803-8692-2

Type

conf

DOI

10.1109/ICSENS.2004.1426432

Filename

1426432