DocumentCode :
3124974
Title :
Atomic scale defects in the Si/SiON system and the negative bias temperature instability
Author :
Lenahan, P.M.
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
fYear :
2004
fDate :
2004
Firstpage :
299
Lastpage :
302
Abstract :
This paper reviews the present day understanding of several atomic scale defects and defect/hydrogen interactions found in Si/SiO2-SiON systems which are likely involved in the negative bias temperature instability.
Keywords :
MIS structures; MOSFET; dangling bonds; defect states; interface states; paramagnetic resonance; semiconductor device reliability; silicon; silicon compounds; MOS technology; Si-SiO2-SiON; Si-SiON; atomic scale defects; bandgap energy; bond breaking; dangling bonds; defect-hydrogen interactions; electron spin resonance; interface traps; negative bias temperature instability; oxide charge; p-channel MOS field effect transistors; reliability problem; Chemical technology; Chemistry; Hydrogen; Magnetic field measurement; Negative bias temperature instability; Niobium compounds; Nitrogen; Paramagnetic resonance; Silicon; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on
Print_ISBN :
0-7803-8528-4
Type :
conf
DOI :
10.1109/ICICDT.2004.1309970
Filename :
1309970
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3124974
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