• DocumentCode
    3125059
  • Title

    Integration of quantum dot optoelectronic devices using selective-area MOCVD

  • Author

    Mokkapati, S. ; Tan, H.H. ; Jagadish, C.

  • Author_Institution
    Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT
  • fYear
    2006
  • fDate
    Oct. 2006
  • Firstpage
    110
  • Lastpage
    111
  • Abstract
    We present results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective-area MOCVD is used to grow the active region with quantum dots emitting at different wavelengths for fabrication of the integrated devices
  • Keywords
    III-V semiconductors; MOCVD; gallium arsenide; indium compounds; integrated optoelectronics; optical fabrication; semiconductor quantum dots; InGaAs; InGaAs quantum-dots; MOCVD; integrated photonic device fabrication; integrated quantum dot optoelectronic device; quantum dots growth; Epitaxial layers; Indium gallium arsenide; Laser tuning; MOCVD; Optoelectronic devices; Photonic band gap; Quantum dot lasers; Quantum dots; Quantum well lasers; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
  • Conference_Location
    Montreal, Que.
  • Print_ISBN
    0-7803-9555-7
  • Electronic_ISBN
    0-7803-9555-7
  • Type

    conf

  • DOI
    10.1109/LEOS.2006.278880
  • Filename
    4054080
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3125059