Title :
Interface Raman Modes to Study Compositional Intermixing in GaAs/AlAs Superlattice
Author :
Scrutton, P. ; Sorel, M. ; Hutchings, D.C. ; Aitchison, J.S. ; Helm, A.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont.
Abstract :
Interface Raman modes were used to study the intermixing of GaAs:AlAs superlattice structures. The intermixing was observed to deprecate the interface mode. This feature was then used to investigate the bandgap modulation in a periodically intermixed grating fabricated in this superlattice structure. Due to their large SNR between intact and intermixed SL material, using IF modes instead of bulk modes a promising avenue for optimizing SL structures that rely on intricate bandgap features defined by QWI
Keywords :
III-V semiconductors; Raman spectra; aluminium compounds; gallium arsenide; semiconductor quantum wells; semiconductor superlattices; GaAs-AlAs; GaAs-AlAs superlattice interface structure; bandgap modulation; compositional intermixing; interface Raman modes; periodically intermixed gratings; quantum-well intermixing; Frequency conversion; Gallium arsenide; Integrated circuit technology; Nonlinear optical devices; Nonlinear optics; Optical devices; Optical materials; Optical modulation; Optical sensors; Optical superlattices;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.278881
