Title :
High quality postgrowth emission wavelength engineering of InAs/InAlGaAs/InP quantum dash-in-well laser
Author :
Djie, H.S. ; Wang, Y. ; Ooi, B.S. ; Wang, D.N. ; Hwang, J. C M ; Dang, G.T. ; Chang, W.H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
Abstract :
We demonstrate bandgap tuned InAs/InAlGaAs quantum-dash-in-well lasers grown on InP material using postgrowth quantum heterostructure intermixing. Compared to the control (non-intermixed) lasers, the light-current characteristics of lasers with emission wavelength tuned by over 100 nm shows insignificant changed suggesting that the quality of the intermixed material is well-preserved
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser beams; quantum well lasers; InAs-InAlGaAs-InP; InP material; bandgap tuned InAs-InAlGaAs-InP quantum dash-in-well laser; light-current characteristics; postgrowth emission; postgrowth quantum heterostructure intermixing; Annealing; III-V semiconductor materials; Indium phosphide; Laser tuning; Optical control; Optical materials; Optical sensors; Photonic band gap; Quantum dots; Quantum well lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.278883
