DocumentCode
3125109
Title
High quality postgrowth emission wavelength engineering of InAs/InAlGaAs/InP quantum dash-in-well laser
Author
Djie, H.S. ; Wang, Y. ; Ooi, B.S. ; Wang, D.N. ; Hwang, J. C M ; Dang, G.T. ; Chang, W.H.
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
fYear
2006
fDate
Oct. 2006
Firstpage
116
Lastpage
117
Abstract
We demonstrate bandgap tuned InAs/InAlGaAs quantum-dash-in-well lasers grown on InP material using postgrowth quantum heterostructure intermixing. Compared to the control (non-intermixed) lasers, the light-current characteristics of lasers with emission wavelength tuned by over 100 nm shows insignificant changed suggesting that the quality of the intermixed material is well-preserved
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser beams; quantum well lasers; InAs-InAlGaAs-InP; InP material; bandgap tuned InAs-InAlGaAs-InP quantum dash-in-well laser; light-current characteristics; postgrowth emission; postgrowth quantum heterostructure intermixing; Annealing; III-V semiconductor materials; Indium phosphide; Laser tuning; Optical control; Optical materials; Optical sensors; Photonic band gap; Quantum dots; Quantum well lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location
Montreal, Que.
Print_ISBN
0-7803-9555-7
Electronic_ISBN
0-7803-9555-7
Type
conf
DOI
10.1109/LEOS.2006.278883
Filename
4054083
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