Thin oxide degradation from HDP-CVD oxide deposition in 300mm process

Author

Lee, Si-Woo ; Ahn, Changmoon ; Kim, Byounghoon ; Chang, Seunghyun ; Han, Dong-Hynn ; An, Chiyong ; Won, Jaihyung ; Kim, Jaeyoung ; Jung, Seungwook ; Shin, Dongho ; Oh, Kyungseok ; Lee, Won-Seong ; Park, Donggun

Author_Institution

Memory Div., Samsung Electron. Co., Ltd., Gyeonggi-Do, South Korea

fYear

2004

fDate

2004

Firstpage

349

Lastpage

353

Abstract

Degradation of thin oxide is investigated under various HDP-CVD process conditions such as deposition time, plasma power, process temperature and electrode spacing. We observed that the oxide is vulnerable to be damaged at longer HDP-CVD process time, higher plasma power and higher process temperature using BV and Qbd measurement in whole area of 300mm wafers. It also strongly related with the equipment parameter such as electrode spacing. The oxide degradation phenomena were rather successfully explained by charging damage through photoconduction mechanism.

Keywords

MOS capacitors; Weibull distribution; dielectric thin films; plasma CVD; semiconductor device breakdown; 300 mm; I-V characteristics; MOS capacitor; breakdown voltage; charge-to-breakdown; deposition time; electrode spacing effects; high density plasma CVD; oxide deposition; plasma power effects; process parameters optimization; thin oxide degradation; Degradation; Design for quality; Dielectric films; Dry etching; MOS capacitors; Plasma applications; Plasma density; Plasma measurements; Plasma temperature; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on

Print_ISBN

0-7803-8528-4

Type

conf

DOI

10.1109/ICICDT.2004.1309980

Filename

1309980