DocumentCode
3125248
Title
Silicon-Based Quantum Cascade Lasers using Electronic Intersubband Transitions in the L Valleys
Author
Driscoll, Kristina ; Paiella, Roberto
Author_Institution
Dept. of Electr. & Comput. Eng., Boston Univ., MA
fYear
2006
fDate
Oct. 2006
Firstpage
130
Lastpage
131
Abstract
We theoretically investigate the use of electronic intersubband transitions in the L valleys of Ge/SiGe quantum wells on SiGe(001) virtual substrates, for the development of silicon-based long-wavelength injection lasers
Keywords
elemental semiconductors; germanium; quantum cascade lasers; silicon; silicon compounds; Ge-SiGe quantum wells; L valleys; Si; SiGe; electronic intersubband transitions; long-wavelength injection lasers; silicon-based quantum cascade lasers; Conducting materials; Germanium silicon alloys; Laser theory; Laser transitions; Optical materials; Quantum cascade lasers; Quantum computing; Quantum mechanics; Quantum well lasers; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location
Montreal, Que.
Print_ISBN
0-7803-9555-7
Electronic_ISBN
0-7803-9555-7
Type
conf
DOI
10.1109/LEOS.2006.278908
Filename
4054090
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