• DocumentCode
    3125290
  • Title

    Systematic error-correcting codes for rank modulation

  • Author

    Hongchao Zhou ; Anxiao Jiang ; Bruck, J.

  • Author_Institution
    Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
  • fYear
    2012
  • fDate
    1-6 July 2012
  • Firstpage
    2978
  • Lastpage
    2982
  • Abstract
    The rank modulation scheme has been proposed recently for efficiently writing and storing data in nonvolatile memories. Error-correcting codes are very important for rank modulation, and they have attracted interest among researchers. In this work, we explore a new approach, systematic error-correcting codes for rank modulation. In an (n, k) systematic code, we use the permutation induced by the levels of n cells to store data, and the permutation induced by the first k cells (k <; n) has a one-to-one mapping to information bits. Systematic codes have the benefits of enabling efficient information retrieval and potentially supporting more efficient encoding and decoding procedures. We study systematic codes for rank modulation equipped with the Kendall´s τ-distance. We present (k + 2, k) systematic codes for correcting one error, which have optimal sizes unless perfect codes exist. We also study the design of multi-error-correcting codes, and prove that for any 2 ≤ k <; n, there always exists an (n, k) systematic code of minimum distance n-k. Furthermore, we prove that for rank modulation, systematic codes achieve the same capacity as general error-correcting codes.
  • Keywords
    decoding; encoding; error correction codes; information retrieval; random-access storage; efficient decoding; efficient encoding; information retrieval; multierror correcting codes; nonvolatile memory; rank modulation; systematic codes; Encoding; Error correction codes; Measurement; Modulation; Systematics; Tin; Vectors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Information Theory Proceedings (ISIT), 2012 IEEE International Symposium on
  • Conference_Location
    Cambridge, MA
  • ISSN
    2157-8095
  • Print_ISBN
    978-1-4673-2580-6
  • Electronic_ISBN
    2157-8095
  • Type

    conf

  • DOI
    10.1109/ISIT.2012.6284106
  • Filename
    6284106