DocumentCode :
3125302
Title :
The impact of long-term memory effects on diode power probes
Author :
Gomes, H. ; Testera, A.R. ; Carvalho, Nuno Borges ; Barciela, M.F. ; Remley, Kate A.
Author_Institution :
Instituto de Telecomunicações, Aveiro, Portugal
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
1
Lastpage :
1
Abstract :
This paper presents an analysis of long term-memory effects on power measurements with diode power probes. We show that a power probe calibrated with a single-tone sinusoidal excitation can provide erroneous values when used with modulated signals. This fact is ascribed to the low-frequency response imposed by the power probe baseband circuit. This hypothesis is first theoretically demonstrated by use of a Volterra series, and then validated by simulations and measurements using a diode power probe.
Keywords :
Baseband; Circuits; Diodes; Microwave measurements; Microwave technology; Power measurement; Probes; Telecommunications; Testing; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5516643
Filename :
5516643
Link To Document :
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