DocumentCode
3125302
Title
The impact of long-term memory effects on diode power probes
Author
Gomes, H. ; Testera, A.R. ; Carvalho, Nuno Borges ; Barciela, M.F. ; Remley, Kate A.
Author_Institution
Instituto de Telecomunicações, Aveiro, Portugal
fYear
2010
fDate
23-28 May 2010
Firstpage
1
Lastpage
1
Abstract
This paper presents an analysis of long term-memory effects on power measurements with diode power probes. We show that a power probe calibrated with a single-tone sinusoidal excitation can provide erroneous values when used with modulated signals. This fact is ascribed to the low-frequency response imposed by the power probe baseband circuit. This hypothesis is first theoretically demonstrated by use of a Volterra series, and then validated by simulations and measurements using a diode power probe.
Keywords
Baseband; Circuits; Diodes; Microwave measurements; Microwave technology; Power measurement; Probes; Telecommunications; Testing; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location
Anaheim, CA
ISSN
0149-645X
Print_ISBN
978-1-4244-6056-4
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2010.5516643
Filename
5516643
Link To Document