Title :
A switched-current class AB ΣΔ-modulator
Author :
Oliaei, O. ; Loumeau, P. ; Aboushady, H.
Author_Institution :
Dept. Electron., Ecole Nat. Superieure des Telecommun., Paris, France
Abstract :
A class AB memory cell for SI-applications is presented. Important advantages of the class AB memory cell such as linearity, low-consumption and high dynamic range are discussed. A fast system-level table-based simulation is used to optimize the circuit design. Simulation results for a second order ΣΔ-modulator are presented to show the high performance of the cell
Keywords :
analogue storage; circuit analysis computing; integrating circuits; modulators; sigma-delta modulation; switched current circuits; 3.3 V; SI-applications; circuit design; class AB ΣΔ-modulator; class AB memory cell; fast system-level table-based simulation; high dynamic range; linearity; low-consumption; second order ΣΔ-modulator; switched-current type; Analytical models; CMOS technology; Capacitance; Circuit simulation; Clocks; Delta-sigma modulation; Dynamic range; Semiconductor device modeling; Switches; Voltage;
Conference_Titel :
Circuits and Systems, 1997. ISCAS '97., Proceedings of 1997 IEEE International Symposium on
Print_ISBN :
0-7803-3583-X
DOI :
10.1109/ISCAS.1997.608750
