DocumentCode :
312551
Title :
MOSFET-only switched-capacitor circuits in digital CMOS technologies
Author :
Yoshizawa, Hirokazu ; Huang, Yunteng ; Temes, Gabor C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
Volume :
1
fYear :
1997
fDate :
9-12 Jun 1997
Firstpage :
457
Abstract :
Design techniques are described for high-linearity switched-capacitor (SC) stages constructed entirely from MOS transistors. The proposed circuits use the gate-to-channel capacitance of MOSFETs for realizing all capacitors. As a result, they can be fabricated in any inexpensive basic digital CMOS technology, and the chip area occupied by the capacitors is much reduced. A number of different SC stages have been designed and fabricated using the proposed techniques. These included SC amplifiers, gain/loss stages and data converters. Both the simulations and the experimental results obtained indicated that very high linearity can be achieved in these circuits
Keywords :
CMOS analogue integrated circuits; integrated circuit design; switched capacitor networks; MOS transistors; MOSFET-only switched-capacitor circuits; SC amplifiers; data converters; design techniques; digital CMOS technologies; gain/loss stages; gate-to-channel capacitance; high-linearity SC stages; CMOS digital integrated circuits; CMOS technology; Capacitance; Linearity; MOS capacitors; MOSFET circuits; Operational amplifiers; Switched capacitor circuits; Switching circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1997. ISCAS '97., Proceedings of 1997 IEEE International Symposium on
Print_ISBN :
0-7803-3583-X
Type :
conf
DOI :
10.1109/ISCAS.1997.608766
Filename :
608766
Link To Document :
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