Wafer bonded silicon photonics

Author

Liang, Di ; Fang, Alexander W. ; Chen, Hui-Wen ; Bowers, John E.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA

fYear

2008

fDate

Sept. 30 2008-Oct. 2 2008

Firstpage

45

Lastpage

46

Abstract

Compound semiconductors-silicon integration has never been of such great demand until the recent difficulty to maintain Moore´s law in the microelectronics industry. Recently, we have developed a hybrid silicon evanescent platform (HSEP), which enables the coherent marriage of incompatible characteristics of III-V and silicon, i.e., direct bandgap and high mobility at III-V side and mature CMOS manufacturability and low-optical loss at silicon side. A series of critical components including lasers, amplifiers, photodetectors, and modulators have been successfully implemented in this platform.

Keywords

CMOS integrated circuits; III-V semiconductors; amplifiers; integrated optics; lasers; photodetectors; wafer bonding; CMOS manufacturability; Moore law; amplifiers; hybrid silicon evanescent platform; lasers; low-optical loss; microelectronics industry; modulators; photodetectors; wafer bonded silicon photonics; Annealing; Distributed feedback devices; Erbium; III-V semiconductor materials; Laser feedback; Photodetectors; Photonics; Silicon; Substrates; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Avionics, Fiber-Optics and Photonics Technology Conference, 2008 IEEE

Conference_Location

San Diego, CA

Print_ISBN

978-1-4244-1919-7

Electronic_ISBN

978-1-4244-1920-3

Type

conf

DOI

10.1109/AVFOP.2008.4653168

Filename

4653168