Magnetic field sensor with low temperature drift using ferro/anti-ferromagnetic bilayer

Summary form only given. We report here a new way to circumvent the quantum fundamental variation of tunnel junction resistance with temperature without any electronic post-processing. Using a crossed magnetisations pattern and a control on direction and intensity of the soft layer anisotropy is a way to achieve reversible properties of magnetic materials. In our system, the sensing layer is a ferromagnetic layer exchanged coupled with an antiferromagnetic one. Thus, the variation of the projection of the soft layer magnetisation on the direction of the sensing field is reversible and also linear in some magnetic sensing field range. Moreover, both tunnel magnetoresistance and exchange field decrease linearly with temperature. It leads to a temperature independent sensor sensibility.