Title :
Back-gate bias effect in the SOI gate controlled hybrid transistor (GCHT)
Author :
Huang, Ru ; Zhang, Xing ; Xi, Xue Mei ; Li, Ying Xue ; Wang, Yang Yuan
Author_Institution :
Inst. of Microelectron., Beijing Univ., China
Abstract :
Back-gate bias effect in SOI gate controlled hybrid transistor is discussed. Experimental results show the transconductance enhancement caused by the back-gate bias. Furthermore, the back-gate effect is alleviated in GCHT compared with conventional MOSFET
Keywords :
insulated gate field effect transistors; silicon-on-insulator; GCHT; SOI gate controlled hybrid transistor; back-gate bias; transconductance; MOSFET circuits; Power MOSFET; Semiconductor films; Silicon; Thickness control; Thickness measurement; Thin film transistors; Threshold voltage; Transconductance; Voltage control;
Conference_Titel :
Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong
Print_ISBN :
0-7803-3802-2
DOI :
10.1109/HKEDM.1997.642355
