DocumentCode
3125656
Title
Back-gate bias effect in the SOI gate controlled hybrid transistor (GCHT)
Author
Huang, Ru ; Zhang, Xing ; Xi, Xue Mei ; Li, Ying Xue ; Wang, Yang Yuan
Author_Institution
Inst. of Microelectron., Beijing Univ., China
fYear
1997
fDate
35672
Firstpage
157
Lastpage
160
Abstract
Back-gate bias effect in SOI gate controlled hybrid transistor is discussed. Experimental results show the transconductance enhancement caused by the back-gate bias. Furthermore, the back-gate effect is alleviated in GCHT compared with conventional MOSFET
Keywords
insulated gate field effect transistors; silicon-on-insulator; GCHT; SOI gate controlled hybrid transistor; back-gate bias; transconductance; MOSFET circuits; Power MOSFET; Semiconductor films; Silicon; Thickness control; Thickness measurement; Thin film transistors; Threshold voltage; Transconductance; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong
Print_ISBN
0-7803-3802-2
Type
conf
DOI
10.1109/HKEDM.1997.642355
Filename
642355
Link To Document