Title :
Electrical and Optical Properties of a IV-VI Semiconductor Structure on Silicon
Author :
Elizondo, L.A. ; McCann, P.J. ; Zhao, F. ; Shi, Z.
Author_Institution :
Sch. of Electr. & Comput. Eng., Oklahoma Univ., Norman, OK
Abstract :
Recent optical characterization results obtained from a IV-VI semiconductor structure containing a 30 nm PbSe multiple quantum well (MQW) active region sandwiched between PbSrSe/BaF2 top and bottom distributed Bragg reflectors (DBRs) on silicon are described
Keywords :
IV-VI semiconductors; barium compounds; distributed Bragg reflectors; electrical conductivity transitions; lead compounds; optical materials; photoluminescence; semiconductor quantum wells; strontium compounds; DBR; IV-VI semiconductor structure; PbSe; PbSrSe-BaF2; Si; distributed Bragg reflectors; electrical properties; intersubband electronic transitions; multiple quantum well active region; optical properties; photoluminescence; Heat sinks; Laser excitation; Optical materials; Optical pulses; Photonic band gap; Quantum well devices; Semiconductor materials; Silicon; Stimulated emission; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.278950
