• DocumentCode
    3125794
  • Title

    Electrical and Optical Properties of a IV-VI Semiconductor Structure on Silicon

  • Author

    Elizondo, L.A. ; McCann, P.J. ; Zhao, F. ; Shi, Z.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Oklahoma Univ., Norman, OK
  • fYear
    2006
  • fDate
    Oct. 2006
  • Firstpage
    178
  • Lastpage
    179
  • Abstract
    Recent optical characterization results obtained from a IV-VI semiconductor structure containing a 30 nm PbSe multiple quantum well (MQW) active region sandwiched between PbSrSe/BaF2 top and bottom distributed Bragg reflectors (DBRs) on silicon are described
  • Keywords
    IV-VI semiconductors; barium compounds; distributed Bragg reflectors; electrical conductivity transitions; lead compounds; optical materials; photoluminescence; semiconductor quantum wells; strontium compounds; DBR; IV-VI semiconductor structure; PbSe; PbSrSe-BaF2; Si; distributed Bragg reflectors; electrical properties; intersubband electronic transitions; multiple quantum well active region; optical properties; photoluminescence; Heat sinks; Laser excitation; Optical materials; Optical pulses; Photonic band gap; Quantum well devices; Semiconductor materials; Silicon; Stimulated emission; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
  • Conference_Location
    Montreal, Que.
  • Print_ISBN
    0-7803-9555-7
  • Electronic_ISBN
    0-7803-9555-7
  • Type

    conf

  • DOI
    10.1109/LEOS.2006.278950
  • Filename
    4054114
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3125794