DocumentCode
3125820
Title
Design of a 0.5–30 GHz darlington amplifier for microwave broadband applications
Author
Weng, Shijie ; Chang, H. ; Chiong, Chau-Ching
Author_Institution
National Central University, Jhongli, Taiwan
fYear
2010
fDate
23-28 May 2010
Firstpage
1
Lastpage
1
Abstract
Design of a 0.5–30 GHz Darlington amplifier using a 2 µm InGaP/GaAs HBT process for microwave broadband applications is presented in this paper. A device size ratio of the Darlington pair and a series inductor in the input are investigated to enhance the bandwidth of the Darlington pair. The proposed method is applied to the circuit design, and the bandwidth of Darlington amplifier is higher than one-thirds maximum oscillation frequency (fmax) of the device. The Darlington amplifier features a 3-dB bandwidth of from 0.5 to 29.7 GHz with an average small signal gain of 10.5 dB. This work demonstrates the highest figure of merit (FOM) among all the HBT Darlington amplifiers so far.
Keywords
Bandwidth; Broadband amplifiers; Circuit synthesis; Frequency; Gain; Gallium arsenide; Heterojunction bipolar transistors; Inductors; Microwave amplifiers; Microwave devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location
Anaheim, CA
ISSN
0149-645X
Print_ISBN
978-1-4244-6056-4
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2010.5516667
Filename
5516667
Link To Document